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Strained-layer quantun-well strures have become incraeasingiy impor-tant in electonic and optoelectonic device applicationsThe fabrication of straine- ...展开
layer quantum-well devices dramatically increased flexibility for band-gap engineering to design the desird optical and electronic proper-ties.In these applications,however,it is crucial to know whether the steained-later structures Ginst strain relief by plastic flow.If the epitaxial strained-layer is suffcientiy thick and mismatched,the formation of misfit dislocations is energetically favored . 收起
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